Asymmetric offset stripe laser for emission in a single lobe
文献类型：专利
| 作者 | WELCH, DAVID; CROSS, PETER; SCIFRES, DONALD R. |
| 发表日期 | 1988-06-14 |
| 专利号 | US4751711 |
| 著作权人 | SDL, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Asymmetric offset stripe laser for emission in a single lobe |
| 英文摘要 | A phased array laser having a laterally asymmetric variation in the gain or coupling of lasing elements of the array for emission in a single far field lobe. The lasing elements are confined by internal waveguide structuring, periodically spaced current confinement stripes, or by a hybrid of both waveguiding and current confinement. The widths, lengths, depths, or separations of the waveguides or stripes vary laterally across the array to affect the gain or coupling of the lasing elements. Alternate embodiments introduce lateral asymmetry in the active region or other layer thicknesses, doping, mirror facet reflectivities, A1 content of the layers, heat dissipation, or thicknesses of electrical contacts. The laterally asymmetric variations may be linear or nonlinear, monotonically increase from one edge to the other edge, or may be such that the relevant parameter is greatest or least in the center of the array. |
| 公开日期 | 1988-06-14 |
| 申请日期 | 1985-08-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/39127]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SDL, INC. |
| 推荐引用方式 GB/T 7714 | WELCH, DAVID,CROSS, PETER,SCIFRES, DONALD R.. Asymmetric offset stripe laser for emission in a single lobe. US4751711. 1988-06-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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