III-V arsenide-nitride semiconductor
文献类型：专利
| 作者 | MAJOR, JO S.; WELCH, DAVID F.; SCIFRES, DONALD R. |
| 发表日期 | 2000-08-08 |
| 专利号 | US6100546 |
| 著作权人 | SDL, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | III-V arsenide-nitride semiconductor |
| 英文摘要 | III-V arsenide-nitride semiconductor are disclosed. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V materials varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V material can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired. |
| 公开日期 | 2000-08-08 |
| 申请日期 | 1997-08-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/39163]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SDL, INC. |
| 推荐引用方式 GB/T 7714 | MAJOR, JO S.,WELCH, DAVID F.,SCIFRES, DONALD R.. III-V arsenide-nitride semiconductor. US6100546. 2000-08-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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