Process of producing semiconductor layer structure
文献类型：专利
| 作者 | ARAKAWA, SATOSHI; MUKAIHARA, TOSHIKAZU; YAMANAKA, NOBUMITSU; KASUKAWA, AKIHIKO |
| 发表日期 | 2003-03-04 |
| 专利号 | US6528337 |
| 著作权人 | FURUKAWA ELECTRIC CO., LTD., THE |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Process of producing semiconductor layer structure |
| 英文摘要 | Disclosed is a process of producing a semiconductor layer structure which emits lights with a plurality of luminescence wavelengths from the same quantum well structure. The layer structure has a layer structure which has the quantum well structure located between a lower light-confinement layer and an upper light-confinement layer. At least a part of the quantum well structure is an area which has a shorter luminescence wavelength than those of the other portions. This area is produced by stacking a lower cladding layer, the lower light-confinement layer, the quantum well structure, the upper light-confinement layer and a first semiconductor layer having a first conductivity type on a semiconductor substrate by epitaxial growth and further stacking a second semiconductor layer having the opposite conductivity type to that of the first semiconductor layer on the entire surface or a partial surface of the first semiconductor layer. This second semiconductor layer may be removed after the formation. |
| 公开日期 | 2003-03-04 |
| 申请日期 | 2000-04-07 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/39171]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO., LTD., THE |
| 推荐引用方式 GB/T 7714 | ARAKAWA, SATOSHI,MUKAIHARA, TOSHIKAZU,YAMANAKA, NOBUMITSU,et al. Process of producing semiconductor layer structure. US6528337. 2003-03-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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