Semiconductor laser element with a single longitudinal oscillation mode
文献类型：专利
| 作者 | YOSHIDA, TOSHIHIKO; TAKIGUCHI, HARUHISA; KANEIWA, SHINJI; KUDO, HIROAKI |
| 发表日期 | 1990-07-10 |
| 专利号 | US4941148 |
| 著作权人 | SHARP KABUSHIKI KAISHA, 22-22 NAGAIKE-CHO, ABENO-KU, OSAKA JAPAN |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser element with a single longitudinal oscillation mode |
| 英文摘要 | A semiconductor laser element of the present invention provides a double hetero junction structure having two clad layers and an active layer formed between the two clad layers. High resistance regions are formed vertically to the light propagating direction at almost the same interval as the light wavelength in at least one of the two clad layers. The high resistance regions form a periodic current blocking structure so the semiconductor laser element may oscillate in a single longitudinal mode even in a non-steady state operation. |
| 公开日期 | 1990-07-10 |
| 申请日期 | 1987-11-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/39188]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA, 22-22 NAGAIKE-CHO, ABENO-KU, OSAKA JAPAN |
| 推荐引用方式 GB/T 7714 | YOSHIDA, TOSHIHIKO,TAKIGUCHI, HARUHISA,KANEIWA, SHINJI,et al. Semiconductor laser element with a single longitudinal oscillation mode. US4941148. 1990-07-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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