Titanium nitride diffusion barrier for use in non-silicon technologies and method
文献类型：专利
| 作者 | DAETWYLER, ANDREAS; DEUTSCH, URS; HARDER, CHRISTOPH; HEUBERGER, WILHELM; LATTA, EBERHARD; JAKUBOWICZ, ABRAM; OOSENBRUG, ALBERTUS; PATRICK, WILLIAM; ROENTGEN, PETER; WILLIAMS, ERICA |
| 发表日期 | 2001-03-20 |
| 专利号 | US6204560 |
| 著作权人 | NORTEL NETWORKS UK LIMITED |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Titanium nitride diffusion barrier for use in non-silicon technologies and method |
| 英文摘要 | As will be described in more detail hereinafter, there is disclosed herein a titanium nitride diffusion barrier layer and associated method for use in non-silicon semiconductor technologies. In one aspect of the invention, a semiconductor device includes a non-silicon active surface. The improvement comprises an ohmic contact serving to form an external electrical connection to the non-silicon active surface in which the ohmic contact includes at least one layer consisting essentially of titanium nitride. In another aspect of the invention, a semiconductor ridge waveguide laser is disclosed which includes a semiconductor substrate and an active layer disposed on the substrate. A cladding layer is supported partially on the substrate and partially on the active layer. The cladding layer includes a ridge portion disposed in a confronting relationship with the active region. A metallization structure substantially covers the ridge portion and includes at least one layer consisting essentially of titanium nitride. |
| 公开日期 | 2001-03-20 |
| 申请日期 | 1998-04-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/39195]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NORTEL NETWORKS UK LIMITED |
| 推荐引用方式 GB/T 7714 | DAETWYLER, ANDREAS,DEUTSCH, URS,HARDER, CHRISTOPH,et al. Titanium nitride diffusion barrier for use in non-silicon technologies and method. US6204560. 2001-03-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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