Surface emitting semiconductor laser and method of manufacturing the same
文献类型：专利
| 作者 | UEKI, NOBUAKI |
| 发表日期 | 2008-02-26 |
| 专利号 | US7336688 |
| 著作权人 | FUJI XEROX CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Surface emitting semiconductor laser and method of manufacturing the same |
| 英文摘要 | A surface emitting semiconductor laser includes a substrate, a first semiconductor multiple layer reflecting mirror formed on the substrate, the reflecting mirror having a semiconductor layer including at least Ga, In and P, an active region formed on the first semiconductor multiple layer reflecting mirror, a second semiconductor multiple layer reflecting mirror formed on the active region, a current confining layer formed between the first and second multiple layer reflecting mirrors, the current confining layer including an oxidized region at a peripheral portion, a first electrode formed at a side of the first semiconductor multiple layer reflecting mirror, and a second electrode formed at a side of the second semiconductor multiple layer reflecting mirror, wherein the first electrode is electrically connected to the semiconductor layer of the first semiconductor multiple layer reflecting mirror. |
| 公开日期 | 2008-02-26 |
| 申请日期 | 2003-11-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/39211]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJI XEROX CO., LTD. |
| 推荐引用方式 GB/T 7714 | UEKI, NOBUAKI. Surface emitting semiconductor laser and method of manufacturing the same. US7336688. 2008-02-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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