Manufacturable laser diode formed on C-plane gallium and nitrogen material
文献类型：专利
| 作者 | MCLAURIN, MELVIN; RARING, JAMES W.; SZTEIN, ALEXANDER; HSU, PO SHAN |
| 发表日期 | 2016-06-14 |
| 专利号 | US9368939 |
| 著作权人 | SORAA LASER DIODE, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Manufacturable laser diode formed on C-plane gallium and nitrogen material |
| 英文摘要 | A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch. |
| 公开日期 | 2016-06-14 |
| 申请日期 | 2014-12-03 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/39240]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SORAA LASER DIODE, INC. |
| 推荐引用方式 GB/T 7714 | MCLAURIN, MELVIN,RARING, JAMES W.,SZTEIN, ALEXANDER,et al. Manufacturable laser diode formed on C-plane gallium and nitrogen material. US9368939. 2016-06-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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