Method of forming a groove in a semiconductor laser diode and a semiconductor laser diode
文献类型：专利
| 作者 | HORIE, HIDEYOSHI; FUJIMORI, TOSHINARI; NAGAO, SATORU; HOSOI, NOBUYUKI; GOTO, HIDEKI |
| 发表日期 | 1996-10-15 |
| 专利号 | US5566198 |
| 著作权人 | MITSUBISHI CHEMICAL CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of forming a groove in a semiconductor laser diode and a semiconductor laser diode |
| 英文摘要 | The disclosure describes a method of forming a groove in a structure of a semiconductor laser diode, which comprises a crystal growth procedure of epitaxial growth of a core layer comprising MP, wherein M represents one or more of elements belonging to group IIIb of periodic table and an upper layer comprising MAs, wherein M represents one or more of elements belonging to group IIIb of periodic table, successively on (100) surface of MAs crystals in a lower layer comprising MAs; a photolithography and wet etching procedure of, after forming an etching mask on the upper layer, forming an etching window to the etching mask; a first etching procedure of selective etching the upper layer; and a second etching procedure of selective etching other faces except for the face in which (111) face of MP crystals in the core layer is exposed. |
| 公开日期 | 1996-10-15 |
| 申请日期 | 1995-01-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/39242]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI CHEMICAL CORPORATION |
| 推荐引用方式 GB/T 7714 | HORIE, HIDEYOSHI,FUJIMORI, TOSHINARI,NAGAO, SATORU,et al. Method of forming a groove in a semiconductor laser diode and a semiconductor laser diode. US5566198. 1996-10-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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