半導体レーザ増幅器と光伝送路と光分岐器と光合波器
文献类型：专利
| 作者 | 森 義弘; 柴田 淳 |
| 发表日期 | 1997-03-11 |
| 专利号 | JP2615951B2 |
| 著作权人 | 松下電器産業株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ増幅器と光伝送路と光分岐器と光合波器 |
| 英文摘要 | PURPOSE:To improve a direction-to-noise ratio of optical signals by providing the end faces of the 1st and 2nd semiconductor regions at least with the 1st and 2nd low reflecting films that are formed at respective end faces. CONSTITUTION:A direct transition type semiconductor active layer 101 and a semiconductor photoabsorption layer 102 are formed selectively on the 1st clad layer that is formed selectively at least at a part on a semiconductor substrate 108 and then the 2nd and 3rd clad layers 103 and 104 are formed on the above layers 101 and 102 respectively. Further, ohmic electrode layers 109 and 110 are formed on the semiconductor substrate 108 and at the 2nd clad layer 103 respectively. Then the 1st low reflecting film 111 is formed at the plane of incidence consisting of at least each part of the side faces of the 1st and 2nd clad layers 106 and 103 and the 2nd low reflecting film 112 is formed at the light emitting plane consisting of at least the 1st and 3rd clad layers 106 and 104. Noise from the semiconductor active layer is thus absorbed effectively by the semiconductor photoabsorption layer 101 and a semiconductor laser amplifier in which the deterioration of a signal-to-noise ratio is low is easily obtd. |
| 公开日期 | 1997-06-04 |
| 申请日期 | 1988-12-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/39250]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 松下電器産業株式会社 |
| 推荐引用方式 GB/T 7714 | 森 義弘,柴田 淳. 半導体レーザ増幅器と光伝送路と光分岐器と光合波器. JP2615951B2. 1997-03-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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