Method of making a semiconductor device having a non-alloyed ohmic contact to a buried doped layer
文献类型：专利
| 作者 | CUNNINGHAM, JOHN EDWARD; GOOSSEN, KEITH WAYNE |
| 发表日期 | 2001-07-10 |
| 专利号 | US6258616 |
| 著作权人 | AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of making a semiconductor device having a non-alloyed ohmic contact to a buried doped layer |
| 英文摘要 | A semiconductor device having a buried doped layer of semiconductor material and a non-alloyed contact to the buried doped layer. The non-alloyed contact is made ohmic by the presence of an underlying delta-doped monolayer. The semiconductor device is made by placing a stop-etch layer on top of a buried doped layer and forming at least one delta-doped monolayer in either the stop-etch layer or the buried doped layer. Layers of semiconductor material disposed above the stop-etch layer are removed with an etchant to define an active region of the semiconductor device. The stop-etch layer prevents the etchant from removing the delta-doped monolayer. A non-alloyed metal film is then deposited over the delta-doped monolayer to form an ohmic contact to the buried doped layer. |
| 公开日期 | 2001-07-10 |
| 申请日期 | 1998-05-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/39253]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED |
| 推荐引用方式 GB/T 7714 | CUNNINGHAM, JOHN EDWARD,GOOSSEN, KEITH WAYNE. Method of making a semiconductor device having a non-alloyed ohmic contact to a buried doped layer. US6258616. 2001-07-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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