半導体波長可変装置
文献类型：专利
| 作者 | 曲 克明; 野口 悦男; 岡本 稔; 三上 修 |
| 发表日期 | 1999-04-02 |
| 专利号 | JP2907234B2 |
| 著作权人 | 日本電信電話株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体波長可変装置 |
| 英文摘要 | PURPOSE:To obtain a semiconductor wavelength varying device having a wide continuous wavelength sweeping width by forming a waveguide including a diffraction grating in a stripe state, and continuously bending the waveguide in a direction where the light travels. CONSTITUTION:An n-type InGaAsP optical guide layer 2, an undoped MQW active layer 3 and a p-type InGaAsP optical guide layer 4 are continuously grown on an n-type InP substrate 1 by a liquid growing method. Then, after an uneven diffraction grating 20 is formed on the layer 4, a p-type InP clad layer 5 and a p-type InGaAsP electrode layer 6 are continuously grown. Thereafter, after a thin SiO2 film is formed on the entire surface by a sputtering method, the thin film is formed in a curved stripe state by photoetching. Subsequently, with the thin film as a mask it is etched until it reaches the substrate 1, and a p-type InP layer 7 and an n-type InP layer 8 are formed. Then a p-type ohmic electrode 9 is formed on the entire surface, a groove 11 is formed by reactive ion etching, and a waveguide G is buried therein. |
| 公开日期 | 1999-06-21 |
| 申请日期 | 1990-12-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/39257]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電信電話株式会社 |
| 推荐引用方式 GB/T 7714 | 曲 克明,野口 悦男,岡本 稔,等. 半導体波長可変装置. JP2907234B2. 1999-04-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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