Radiation-emitting semiconductor index-guided diode
文献类型：专利
| 作者 | SCHEMMANN, MARCEL, FRANZ, CHRISTIAN; VAN DER POEL, CAROLUS, JOHANNES; ACKET, GERARD, ADRIAAN |
| 发表日期 | 1999-01-20 |
| 专利号 | EP0714558B1 |
| 著作权人 | UNIPHASE OPTO HOLDINGS, INC. |
| 国家 | 欧洲专利局 |
| 文献子类 | 授权发明 |
| 其他题名 | Radiation-emitting semiconductor index-guided diode |
| 英文摘要 | The invention relates to a radiation-emitting semiconductor index-guided diode, especially a laser having a first (1) and a second (3) cladding layer, an active layer (2) and a mesa (20) which comprises at least the second cladding layer (3) and which lies recessed in a third cladding layer (4). In a diode according to the invention, the second cladding layer (3) comprises a first sub-layer (3A) which adjoints the active layer (2) and is comparatively thin, and a second sub-layer (3B) which adjoins the first sub-layer (3A) and is comparatively thick, while the refractive index of the first sub-layer (3A) is lower than that of the second sub-layer (3B). On the one hand the confinement in the thickness direction of charge carriers and radiation is good in such a diode. On the other hand, the third cladding layer (4) is allowed to have a comparatively high refractive index, so a comparatively low bandgap, and thus a comparatively low aluminium content, while nevertheless the lateral confinement of the radiation is good. Thus, the aluminium content of the third cladding layer (4) may be below 50 at.% or below 40 at.% in GaAs/AlGaAs or InGaAs/AlGaAs diodes, respectively, which cover the important wavelength range from 0.7 to 1 mu m. |
| 公开日期 | 1999-01-20 |
| 申请日期 | 1995-05-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/39275]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | UNIPHASE OPTO HOLDINGS, INC. |
| 推荐引用方式 GB/T 7714 | SCHEMMANN, MARCEL, FRANZ, CHRISTIAN,VAN DER POEL, CAROLUS, JOHANNES,ACKET, GERARD, ADRIAAN. Radiation-emitting semiconductor index-guided diode. EP0714558B1. 1999-01-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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