Half-wavelength micropost microcavity with electric field maximum in the high-refractive-index material
文献类型：专利
| 作者 | VUCKOVIC, JELENA; YAMAMOTO, YOSHIHISA |
| 发表日期 | 2007-11-06 |
| 专利号 | US7292613 |
| 著作权人 | BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY, THE |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Half-wavelength micropost microcavity with electric field maximum in the high-refractive-index material |
| 英文摘要 | A micropost microcavity device has a maximum field intensity at the center of a high-index spacer as well as a small mode volume. The device has an approximately half-wavelength thick low-index spacer [400] sandwiched between two quarter wave stacks [410, 420]. The low-index spacer has a high-index subspacer layer [470] positioned at its center. The subspacer layer has a thickness smaller than a quarter wavelength. As a result, the electric field intensity remains a maximum at the center of the spacer where the high-index subspacer is positioned. A quantum dot or other active region [480] may be embedded within the subspacer [470]. The microcavity devices provide, for example, single photon sources, single dot lasers, low-threshold quantum dot or quantum well lasers, or devices for strong coupling between a single quantum dot and the cavity field which can be used as components of photonic integrated circuits, quantum computers, quantum networks, or quantum cryptographic systems. |
| 公开日期 | 2007-11-06 |
| 申请日期 | 2003-07-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/39280]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY, THE |
| 推荐引用方式 GB/T 7714 | VUCKOVIC, JELENA,YAMAMOTO, YOSHIHISA. Half-wavelength micropost microcavity with electric field maximum in the high-refractive-index material. US7292613. 2007-11-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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