Group II-VI material semiconductor optical device with strained multiquantum barriers
文献类型：专利
| 作者 | IRIKAWA, MICHINORI; IGA, KENICHI |
| 发表日期 | 1994-11-08 |
| 专利号 | US5362974 |
| 著作权人 | FURUKAWA ELECTRIC CO., LTD., THE |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Group II-VI material semiconductor optical device with strained multiquantum barriers |
| 英文摘要 | This invention provides a blue light semiconductor optical device capable of effectively oscillating in a temperature range above room temperature. A double hetero structure semiconductor optical device according to the invention is made of a compound semiconductor containing Zn and/or Cd as group II elements and S and/or Se and/or Te as group VI elements and comprises an active layer, a light confining layer and a cladding layer arranged on a semiconductor substrate as well as a multiquantum barrier structure having a strained superlattice layer in part of the cladding layer or the light confining layer for an effect of reflecting incident carriers as waves in phase conditions capable of allowing mutual enhancement of the incident and reflected waves. |
| 公开日期 | 1994-11-08 |
| 申请日期 | 1993-06-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/39282]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO., LTD., THE |
| 推荐引用方式 GB/T 7714 | IRIKAWA, MICHINORI,IGA, KENICHI. Group II-VI material semiconductor optical device with strained multiquantum barriers. US5362974. 1994-11-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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