Inverted channel substrate planar semiconductor laser
文献类型：专利
| 作者 | YANG, JANE J.; HONG, CHI-SHAIN |
| 发表日期 | 1989-04-11 |
| 专利号 | US4821278 |
| 著作权人 | TRW INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Inverted channel substrate planar semiconductor laser |
| 英文摘要 | A semiconductor laser structure having the same advantages as a channeled substrate planar laser, but without the difficulties of fabrication associated with this structure. The structure includes a substrate, a planar first cladding layer, a planar active layer, and a second cladding layer in which a mesa region is formed. A blocking layer is formed over the second cladding layer and electrical contact is made through the blocking layer in the region of the mesa. The blocking layer functions to confine current flow in the mesa region and to provide index-guiding of light in the mesa region. Because of its simple geometry, the structure can be conveniently formed using a desirable fabrication process, such as metalorganic chemical vapor deposition (MOCVD). In one disclosed embodiment of the invention, the mesa is broadened to include at least one intermediate ledge on each side of a central pedestal. This reduces the abruptness of the change in effective index of refraction encountered by the laser light, and reduces astigmatism in the resultant beam. |
| 公开日期 | 1989-04-11 |
| 申请日期 | 1987-04-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/39289]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TRW INC. |
| 推荐引用方式 GB/T 7714 | YANG, JANE J.,HONG, CHI-SHAIN. Inverted channel substrate planar semiconductor laser. US4821278. 1989-04-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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