Semiconductor lasers and etched-facet integrated devices having H-shaped windows
文献类型：专利
| 作者 | FANG, RUIYU; ROSSI, GIAMMARCO; STANO, ALESSANDRO; MORELLO, GIULIANA; GOTTA, PAOLA-IDA; PAOLETTI, ROBERTO; DELLA CASA, PIETRO; MENEGHINI, GIANCARLO |
| 发表日期 | 2015-03-17 |
| 专利号 | US8982921 |
| 著作权人 | AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor lasers and etched-facet integrated devices having H-shaped windows |
| 英文摘要 | An edge-emitting optical semiconductor structure has a substrate, an active multiple quantum well (MQW) region formed on the substrate, and a ridge waveguide extending between first and second etched end facets. The first etched end facet is disposed in a first window, while the second etched end facet is disposed in a second window. The first etched end facet extends between a pair of alcoves in the first window, and the second etched end facet extends between a pair of alcoves in the second window. An integrated device in which two such structures are provided has an H-shaped window where the two structures adjoin each other. The structure can be fabricated using a process that involves a first mask to form the ridge waveguide and then a second mask and an etching process to form the windows. |
| 公开日期 | 2015-03-17 |
| 申请日期 | 2013-02-07 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/39304]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED |
| 推荐引用方式 GB/T 7714 | FANG, RUIYU,ROSSI, GIAMMARCO,STANO, ALESSANDRO,et al. Semiconductor lasers and etched-facet integrated devices having H-shaped windows. US8982921. 2015-03-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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