Semiconductor laser having an etched mirror and a narrow stripe width, with an integrated photodetector
文献类型：专利
| 作者 | KITAMURA, MITSUHIRO; KOBAYASHI, KOHROH; SUGIMOTO, SHIGETOKI |
| 发表日期 | 1984-09-04 |
| 专利号 | US4470143 |
| 著作权人 | NIPPON ELECTRIC CO., LTD., 33-1, SHIBA GOCHOME, MINATO-KU, TOKYO, |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser having an etched mirror and a narrow stripe width, with an integrated photodetector |
| 英文摘要 | In an integrated optical semiconductor device wherein a stripe geometry laser diode is separated from a photodetector by an etched groove, the stripe region has a smaller width, such as 2 to 3 microns, than a carrier generating region of the photodetector. The stripe region is preferably rendered thicker than the carrier generating region, in which case the carrier generating region is more preferably made of a seimconductor material having a narrower band gap than the material of the stripe region. The stripe region may be defined by a buried mesa structure. Alternatively, the stripe region may be bounded transversely of a pair of heterojunctions therefor by a pair of channel-shaped regions of a semiconductor material having a wider bank gap than the material of the stripe region. In this event, the carrier generating region is divided into three parts by extensions of the channel-shaped regions. Most preferably, the carrier generating region has a light receiving end which is not parallel to a light emitting end of the stripe region. The light receiving end may be cylindrical. |
| 公开日期 | 1984-09-04 |
| 申请日期 | 1982-08-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/39343]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON ELECTRIC CO., LTD., 33-1, SHIBA GOCHOME, MINATO-KU, TOKYO, |
| 推荐引用方式 GB/T 7714 | KITAMURA, MITSUHIRO,KOBAYASHI, KOHROH,SUGIMOTO, SHIGETOKI. Semiconductor laser having an etched mirror and a narrow stripe width, with an integrated photodetector. US4470143. 1984-09-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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