中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Optoelectronic device with improved light extraction

文献类型:专利

作者ELIASHEVICH, IVAN; VENUGOPALAN, HARI; KARLICEK, BOB; WEAVER, STANTON
发表日期2004-06-08
专利号US6746889
著作权人CURRENT LIGHTING SOLUTIONS, LLC
国家美国
文献子类授权发明
其他题名Optoelectronic device with improved light extraction
英文摘要An improved method for producing optoelectronic devices such as light emitting diodes or laser diodes is provided. Light emitting diodes or laser diodes are provided with improved light extraction. Epitaxial layers including a light emitting p-n junction are deposited on a substrate, and separations are cut through the epitaxial layers to provide a structure including a plurality of individual dies on the substrate. The structure is mounted on a submount and the substrate is removed. An index matching material is then attached to improve light extraction from the optoelectronic device.
公开日期2004-06-08
申请日期2002-03-27
状态授权
源URL[http://ir.opt.ac.cn/handle/181661/39419]  
专题半导体激光器专利数据库
作者单位CURRENT LIGHTING SOLUTIONS, LLC
推荐引用方式
GB/T 7714
ELIASHEVICH, IVAN,VENUGOPALAN, HARI,KARLICEK, BOB,et al. Optoelectronic device with improved light extraction. US6746889. 2004-06-08.

入库方式: OAI收割

来源:西安光学精密机械研究所

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