光半導体集積装置の製造方法
文献类型：专利
| 作者 | 雙田 晴久 |
| 发表日期 | 1998-05-15 |
| 专利号 | JP2780829B2 |
| 著作权人 | 富士通株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 光半導体集積装置の製造方法 |
| 英文摘要 | PURPOSE:To manufacture an optical semiconductor integrated device having a superior optical coupling efficiency by a method wherein a first semiconductor layer is selectively formed on the surface of a semiconductor substrate and thereafter, a mask is prepared thereon and when a second semiconductor layer is selectively grown on the residual part of the substrate surface excluding the first semiconductor layer, a step at the coupled part of the first semiconductor layer with the second semiconductor layer is reduced. CONSTITUTION:A crystal growth is performed on a semiconductor substrate 1 using first and second masks 4 and 5 to grow a second semiconductor layer 3. A first semiconductor layer 2 to be formed with a waveguide 2a thereon is ready-formed under the mask 4 and a second waveguide 3a is scheduled to form on the extension of the waveguide on the layer 2. The mask 5 is formed along a region to be formed with the waveguide 3a and the layer 3 is selectively grown on the residual part of the substrate surface excluding the layer 2. At that time, a step at the coupled part of the layer 2 with the layer 3 is reduced, whereby an optical semiconductor integrated circuit having a superior optical coupling efficiency can be manufactured. |
| 公开日期 | 1998-07-30 |
| 申请日期 | 1989-12-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/39425]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 富士通株式会社 |
| 推荐引用方式 GB/T 7714 | 雙田 晴久. 光半導体集積装置の製造方法. JP2780829B2. 1998-05-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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