Semiconductor laser device and fabricating method thereof
文献类型：专利
| 作者 | SHOICHI, , KARAKIDA; MOTOHARU, , MIYASHITA; YUTAKA, , MIHASHI |
| 发表日期 | 1997-10-08 |
| 专利号 | GB2301481B |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 英国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device and fabricating method thereof |
| 英文摘要 | Semiconductor lasers operating in the 0.9 to 2m band and preferably at 0.98m and which have a quantum well active layer are constructed so as to prevent mode hopping and kinks in the light output-current characteristic. In one embodiment a multiple reflection film 20 is provided parallel to the active layer 4 and perpendicular to the laser facets 17. The reflective film is made by alternately laminating two semiconductor materials which are of the same conductivity type but differ in their refractive indices. In an alternative embodiment a laser absorbing film is provided parallel to and spaced from the active layer. The absorbing layer may have a small strain against the substrate. In a third embodiment a cladding layer is provided composed of In r Ga 1-r P where r is chosen so that the cladding layer has the same lattice constant as a GaAs substrate.; The thickness of the cladding layer is larger than 4m. |
| 公开日期 | 1997-10-08 |
| 申请日期 | 1996-02-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/39451]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | SHOICHI, , KARAKIDA,MOTOHARU, , MIYASHITA,YUTAKA, , MIHASHI. Semiconductor laser device and fabricating method thereof. GB2301481B. 1997-10-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。