Dopant diffusion blocking for optoelectronic devices using InAlAs and/or InGaAlAs
文献类型：专利
| 作者 | AKULOVA, YULIYA A.; CHU, SUNG-NEE G.; GEVA, MICHAEL; HYBERTSEN, MARK S.; LENTZ, CHARLES W.; OUGAZZADEN, ABDALLAH |
| 发表日期 | 2003-12-16 |
| 专利号 | US6664605 |
| 著作权人 | QORVO US, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Dopant diffusion blocking for optoelectronic devices using InAlAs and/or InGaAlAs |
| 英文摘要 | A method for decreasing the diffusion of dopant atoms in the active region, as well as the interdiffuision of different types of dopant atoms among adjacent doped regions, of optoelectronic devices is disclosed. The method of the present invention employs a plurality of InAlAs and/or InGaAlAs layers to avoid the direct contact between the dopant atoms and the active region, and between the dopant atoms in adjacent blocking structures of optoelectronic devices. A semi-insulating buried ridge structure, as well as a ridge structure, in which the interdiffusion of different types of dopant atoms is suppressed are also disclosed. |
| 公开日期 | 2003-12-16 |
| 申请日期 | 2000-03-31 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/39464]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | QORVO US, INC. |
| 推荐引用方式 GB/T 7714 | AKULOVA, YULIYA A.,CHU, SUNG-NEE G.,GEVA, MICHAEL,et al. Dopant diffusion blocking for optoelectronic devices using InAlAs and/or InGaAlAs. US6664605. 2003-12-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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