Semiconductor laser and method for producing same
文献类型：专利
| 作者 | ABE, HIROAKI |
| 发表日期 | 2003-10-14 |
| 专利号 | US6633597 |
| 著作权人 | SONY CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser and method for producing same |
| 英文摘要 | A semiconductor laser enabling a higher output without lowering the performance of the laser such as its reliability, that is, a Fabry-Perot type semiconductor laser having, successively grown on a substrate, a first cladding layer of a first conductivity type, an active layer having at least one quantum well layer and at least two barrier layers, and a second cladding layer of a second conductivity type, a pair of facing end faces of said active layer constituting a resonator, wherein an impurity and holes due to the impurity are diffused in at least one region near the end faces of said active layer, and the quantum well layer and the barrier layers constituting said active layer are made mixed-crystals. |
| 公开日期 | 2003-10-14 |
| 申请日期 | 1999-12-29 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/39475]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORPORATION |
| 推荐引用方式 GB/T 7714 | ABE, HIROAKI. Semiconductor laser and method for producing same. US6633597. 2003-10-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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