Method for manufacturing group III nitride compound semiconductor laser diodes
文献类型：专利
| 作者 | YAMASAKI, SHIRO; NAGAI, SEIJI; KOIKE, MASAYOSHI; AKASAKI, ISAMU; AMANO, HIROSHI; YAMADA, ISAO; MATSUO, JIRO |
| 发表日期 | 2002-11-26 |
| 专利号 | US6486068 |
| 著作权人 | TOYOTA GOSEI CO., LTD |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for manufacturing group III nitride compound semiconductor laser diodes |
| 英文摘要 | A method for manufacturing a laser diode using Group III nitride compound semiconductor comprising a buffer layer 2, an n+ layer 3, a cladding layer 4, an active layer 5, a p-type cladding layer 61, a contact layer 62, an SiO2 layer 9, an electrode 7 which is formed on the window formed in a portion of the SiO2 layer 9, and an electrode 8 which is formed on a portion of the n+ layer 3 by etching a portion of 4 layers from the contact layer 62 down to the cladding layer 4. One pair of opposite facets S of a cavity is formed by RIBE, and then the facets are etched by gas cluster ion beam etching using Ar gas. As a result, the facets S are flatted and the mirror reflection of the facets S is improved. |
| 公开日期 | 2002-11-26 |
| 申请日期 | 1998-01-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/39479]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOYOTA GOSEI CO., LTD |
| 推荐引用方式 GB/T 7714 | YAMASAKI, SHIRO,NAGAI, SEIJI,KOIKE, MASAYOSHI,et al. Method for manufacturing group III nitride compound semiconductor laser diodes. US6486068. 2002-11-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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