Semiconductor optoelectronic device with improved beam quality
文献类型：专利
| 作者 | SHCHUKIN, VITALY; LEDENTSOV, NIKOLAI |
| 发表日期 | 2013-01-15 |
| 专利号 | US8355419 |
| 著作权人 | VI SYSTEMS GMBH |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor optoelectronic device with improved beam quality |
| 英文摘要 | A tilted wave semiconductor diode laser containing additional structural elements that improve beam quality is provided. The tilted wave laser includes a narrow active waveguide coupled to a broad passive waveguide, and light generated in the active waveguide leaks to the broad waveguide and propagates in it in the form of a tilted optical wave. The device emits laser light coming out from the broad waveguide in the form of one or two narrow beams. The additional structural elements may include grooves intersecting the narrow waveguide and a stripe that suppress undesired emission from the narrow waveguide; grooves that extend parallel to the stripe that suppress parasitic lateral optical modes; unpumped sections of the stripe that suppress light emission from the narrow waveguide; and facet coatings having distinct reflectance for the light in the narrow and in the broad waveguides thus suppressing emission of light from the narrow waveguide. |
| 公开日期 | 2013-01-15 |
| 申请日期 | 2009-11-30 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/39481]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | VI SYSTEMS GMBH |
| 推荐引用方式 GB/T 7714 | SHCHUKIN, VITALY,LEDENTSOV, NIKOLAI. Semiconductor optoelectronic device with improved beam quality. US8355419. 2013-01-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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