半導体レ-ザ
文献类型：专利
| 作者 | 安井 公治; 田中 正明; 八木 重典 |
| 发表日期 | 1996-10-03 |
| 专利号 | JP2568555B2 |
| 著作权人 | 三菱電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ-ザ |
| 英文摘要 | PURPOSE:To make it possible to emit stably a high-output and high-quality laser beam by a method wherein a semiconductor laser is provided with a laser resonator consisting of a first element, by which the laser beam is partially reflected and magnified, and a second element, by which the laser beam reflected partially by the first element is reflected back to the first element. CONSTITUTION:Carriers fed from a power supply 67 are passed through a cap layer 4 and a clad layer 2 to form an active medium A laser beam generated in the medium 1 is magnified by a magnifier 8 provided on the side surface of an element, is further reflected by a reflecting mirror 9 and most of the outer peripheral part of the laser beam are emitted from parts, on which nonreflection coatings 81 are performed, on the other periphery of the magnifier 8 as a laser beam 10. Moreover, part of the center part of the laser beam is emitted to the outside through the magnifier 8 as a laser beam 1 0. In such a way, the laser beam is emitted to the outside as a high-quality beam intensified on the way by combining the beam 10 and the beam 100. Thereby, a high- output laser beam can be obtained stably without causing any deformation. |
| 公开日期 | 1997-01-08 |
| 申请日期 | 1987-06-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/39492]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三菱電機株式会社 |
| 推荐引用方式 GB/T 7714 | 安井 公治,田中 正明,八木 重典. 半導体レ-ザ. JP2568555B2. 1996-10-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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