Semiconductor laser device having a current non-injection area
文献类型：专利
| 作者 | SHONO, ATSUSHI; HOTTA, HITOSHI; SAWANO, HIROYUKI |
| 发表日期 | 2005-01-11 |
| 专利号 | US6842471 |
| 著作权人 | RENESAS ELECTRONICS CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device having a current non-injection area |
| 英文摘要 | A semiconductor laser device includes an active layer and first and second current blocking layers having aligned stripe openings for injecting operating current into the active layer in a current injection area. The second current blocking layer has another opening, through which the first current blocking layer contacts an external cladding layer, in the vicinity of the emission facet of the laser cavity to form a current non-injection area. The first current blocking layer and the external cladding layer have a substantially equal refractive index. |
| 公开日期 | 2005-01-11 |
| 申请日期 | 2003-04-01 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/39494]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | RENESAS ELECTRONICS CORPORATION |
| 推荐引用方式 GB/T 7714 | SHONO, ATSUSHI,HOTTA, HITOSHI,SAWANO, HIROYUKI. Semiconductor laser device having a current non-injection area. US6842471. 2005-01-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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