Double channel planar buried heterostructure laser
文献类型：专利
| 作者 | KITAMURA, MITSUHIRO; MITO, IKUO; KOBAYASHI, KOHROH |
| 发表日期 | 1985-06-25 |
| 专利号 | US4525841 |
| 著作权人 | NIPPON ELECTRIC CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Double channel planar buried heterostructure laser |
| 英文摘要 | A buried heterostructure semiconductor laser diode with improved efficiency, CW operating temperature and output characteristic is comprised of a semiconductor substrate of a first conductivity type and includes successively at least a first cladding semiconductor layer of the first conductivity type, an active semiconductor layer, and a second cladding semiconductor layer of a second conductivity type. The active semiconductor layer has a narrower bandgap than those of the first and second cladding semiconductor layers. The multilayer double heterostructure has a stripe geometry with channels formed along both sides of the stripe and extending down to the first cladding layer. A current blocking layer is formed on the multilayer double heterostructure except for the top surface of the stripe geometry, in order to block a current flow therethrough. |
| 公开日期 | 1985-06-25 |
| 申请日期 | 1982-10-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/39503]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON ELECTRIC CO., LTD. |
| 推荐引用方式 GB/T 7714 | KITAMURA, MITSUHIRO,MITO, IKUO,KOBAYASHI, KOHROH. Double channel planar buried heterostructure laser. US4525841. 1985-06-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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