Edge-emitting semiconductor laser
文献类型：专利
| 作者 | LINDBERG, HANS |
| 发表日期 | 2015-03-31 |
| 专利号 | US8995491 |
| 著作权人 | OSRAM OPTO SEMICONDUCTORS GMBH |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Edge-emitting semiconductor laser |
| 英文摘要 | An edge-emitting semiconductor laser includes a first waveguide layer, into which an active layer that generates laser radiation is embedded. The laser also includes a second waveguide layer, into which no active layer is embedded. The laser radiation generated in the active layer forms a standing wave, which has respective intensity maxima in the first waveguide layer and corresponding intensity minima in the second waveguide layer and respective intensity minima in the first waveguide layer and corresponding intensity maxima in the second waveguide layer at periodic intervals in a beam direction of the semiconductor laser. An at least regionally periodic contact structure is arranged at a surface of the edge-emitting semiconductor laser. A period length of the contact structure is equal to a period length of the standing wave, such that the semiconductor laser has an emission wavelength that is set by the period length of the contact structure. |
| 公开日期 | 2015-03-31 |
| 申请日期 | 2012-06-08 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/39505]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OSRAM OPTO SEMICONDUCTORS GMBH |
| 推荐引用方式 GB/T 7714 | LINDBERG, HANS. Edge-emitting semiconductor laser. US8995491. 2015-03-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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