Temperature-insensitive semiconductor laser
文献类型：专利
| 作者 | NUMAI, TAKAHIRO |
| 发表日期 | 2002-12-31 |
| 专利号 | US6501776 |
| 著作权人 | CANON KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Temperature-insensitive semiconductor laser |
| 英文摘要 | A semiconductor laser includes a substrate, semiconductor layers formed on the substrate, which construct a cavity including a waveguide with an active region and include at least one semiconductor layer whose refractive-index temperature coefficient is set at a non-positive or minute value sufficient to achieve at least one of the functions of stabilizing an oscillation wavelength of the semiconductor laser and suppressing an overflow of carriers from the active region, and a driving unit for causing electron-hole recombination in the active region. |
| 公开日期 | 2002-12-31 |
| 申请日期 | 2000-01-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/39520]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CANON KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | NUMAI, TAKAHIRO. Temperature-insensitive semiconductor laser. US6501776. 2002-12-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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