Method for production of a DFB laser diode having a coupled optical waveguide and a DFB laser diode layer structure
文献类型：专利
| 作者 | MATZ, RICHARD; STEGMULLER, BERNHARD |
| 发表日期 | 2000-05-23 |
| 专利号 | US6067312 |
| 著作权人 | SIEMENS AKTIENGESELLSCHAFT |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for production of a DFB laser diode having a coupled optical waveguide and a DFB laser diode layer structure |
| 英文摘要 | PCT No. PCT/DE96/00781 Sec. 371 Date Nov. 18, 1997 Sec. 102(e) Date Nov. 18, 1997 PCT Filed May 3, 1996 PCT Pub. No. WO96/37020 PCT Pub. Date Nov. 21, 1996Use of the method allows MRCW high-temperature laser diodes with a coupled optical waveguide to be produced in four epitaxial steps. The advantage is that, of the four epitaxial processes the first two and the last two are carried out virtually immediately successively after one another and an interruption is necessary only to produce a grating. Other components, such as photodiodes for example, can also be produced using the method. |
| 公开日期 | 2000-05-23 |
| 申请日期 | 1996-05-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/39523]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SIEMENS AKTIENGESELLSCHAFT |
| 推荐引用方式 GB/T 7714 | MATZ, RICHARD,STEGMULLER, BERNHARD. Method for production of a DFB laser diode having a coupled optical waveguide and a DFB laser diode layer structure. US6067312. 2000-05-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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