Method of manufacturing a carbon-doped compound semiconductor layer
文献类型：专利
| 作者 | KIZUKI, HIROTAKA |
| 发表日期 | 2000-08-01 |
| 专利号 | US6096617 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of manufacturing a carbon-doped compound semiconductor layer |
| 英文摘要 | A compound semiconductor device is manufactured by forming a carbon-doped compound semiconductor device at a predetermined growth temperature on a compound semiconductor substrate, stopping the growth and changing the growth temperature of the compound semiconductor layer, including the carbon-doped compound semiconductor layer, to a predetermined temperature under an atmosphere comprising an alkylarsine, thereby avoiding the formation of free atomic hydrogen and preventing hydrogen contamination of the C-doped compound semiconductor layer. As a result, the amount of coupling between hydrogen and carbon in the carbon-doped compound semiconductor layer is significantly reduced, thereby preventing lowering of the carbon carrier concentration. The present method enables formation of a C-doped GaAs base layer without deterioration of electrical characteristics, and formation of a laser having a second clad layer of C-doped compound semiconductor layer with improved reliability. |
| 公开日期 | 2000-08-01 |
| 申请日期 | 1996-07-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/39533]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | KIZUKI, HIROTAKA. Method of manufacturing a carbon-doped compound semiconductor layer. US6096617. 2000-08-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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