Semiconductor laser having a doped active layer
文献类型：专利
| 作者 | YOUNG, DAVID BRUCE; HA, YUK LUNG; VERMA, ASHISH; ENG, LARS |
| 发表日期 | 2009-08-11 |
| 专利号 | US7573925 |
| 著作权人 | FINISAR CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser having a doped active layer |
| 英文摘要 | Semiconductor lasers having a doped active region. In one example embodiment, a laser includes a substrate and a doped active region positioned above the substrate. The doped active region includes a plurality of quantum wells separated by a plurality of barrier layers. The quantum wells and the barrier layers are doped with a doping material with a concentration between about 1*10^16/cm3 to about 1*10^17/cm3. |
| 公开日期 | 2009-08-11 |
| 申请日期 | 2007-05-15 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/39573]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FINISAR CORPORATION |
| 推荐引用方式 GB/T 7714 | YOUNG, DAVID BRUCE,HA, YUK LUNG,VERMA, ASHISH,et al. Semiconductor laser having a doped active layer. US7573925. 2009-08-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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