Semiconductor light emitting devices with non-epitaxial upper cladding
文献类型：专利
| 作者 | BOUR, DAVID P.; CHUA, CHRISTOPHER L.; JOHNSON, NOBLE M.; YANG, ZHIHONG |
| 发表日期 | 2010-12-21 |
| 专利号 | US7856040 |
| 著作权人 | PALO ALTO RESEARCH CENTER INCORPORATED |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor light emitting devices with non-epitaxial upper cladding |
| 英文摘要 | The AlGaN upper cladding layer of a nitride laser diode is replaced by a non-epitaxial layer, such as metallic silver. If chosen to have a relatively low refractive index value, the mode loss from absorption in the non-epitaxial cladding layer is acceptably small. If also chosen to have a relatively high work-function, the non-epitaxial layer forms an electrical contact to the nitride semiconductors. An indium-tin-oxide layer may also be employed with the non-epitaxial cladding layer. |
| 公开日期 | 2010-12-21 |
| 申请日期 | 2008-09-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/39585]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | PALO ALTO RESEARCH CENTER INCORPORATED |
| 推荐引用方式 GB/T 7714 | BOUR, DAVID P.,CHUA, CHRISTOPHER L.,JOHNSON, NOBLE M.,et al. Semiconductor light emitting devices with non-epitaxial upper cladding. US7856040. 2010-12-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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