中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Buried waveguide window regions for improved performance semiconductor lasers and other opto-electronic applications

文献类型:专利

作者THORNTON, ROBERT L.; BURNHAM, ROBERT D.
发表日期1989-10-17
专利号US4875216
著作权人XEROX CORPORATION, A CORP. OF NY
国家美国
文献子类授权发明
其他题名Buried waveguide window regions for improved performance semiconductor lasers and other opto-electronic applications
英文摘要A window laser having at least one window region with a transparent waveguide layer optically coupled to an active region generating lightwaves. The waveguide layer is characterized by a broader guided transverse mode for the lightwaves than the active region and may have a thickness which is greater than the active region, a refractive index difference with respect to cladding layers which is less than a refractive index difference between the active region and the cladding layers, or both. The waveguide layer may be coupled to the active region via a transition region characterized by a gradual change in the guide mode width of the lightwaves, such as from a tapered increase in thickness of the waveguide layer in a direction away from the active region. The preferred method of making window region having these transparent waveguides is impurity induced disordering, in which the interfaces between active region and cladding layers is disordered by impurity species to produce the waveguide layer with increased bandgap and a graded transverse refractive index profile. The laser is characterized by a high power output beam with reduced far field transverse divergence.
公开日期1989-10-17
申请日期1987-11-30
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/39595]  
专题半导体激光器专利数据库
作者单位XEROX CORPORATION, A CORP. OF NY
推荐引用方式
GB/T 7714
THORNTON, ROBERT L.,BURNHAM, ROBERT D.. Buried waveguide window regions for improved performance semiconductor lasers and other opto-electronic applications. US4875216. 1989-10-17.

入库方式: OAI收割

来源:西安光学精密机械研究所

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