Radiation-emitting semiconductor device having emission in the visible range and a high maximum operating temperature
文献类型：专利
| 作者 | VALSTER, ADRIAAN; LIEDENBAUM, COEN T. H. F. |
| 发表日期 | 1993-04-20 |
| 专利号 | US5204869 |
| 著作权人 | JDS UNIPHASE CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Radiation-emitting semiconductor device having emission in the visible range and a high maximum operating temperature |
| 英文摘要 | Radiation-emitting semiconductor diodes in the form of a laser diode or an LED form important components in information processing systems. There is a particular demand for diodes emitting in the visible range of the spectrum and having a high permissible operating temperature. A radiation-emitting diode including a semiconductor body with a semiconductor substrate on which a lower cladding layer, an active layer, and an upper cladding layer are present, the active layer and the two cladding layers each including different semiconductor materials which form a mixed crystal, partly fulfill the above requirements. According to the invention, such a diode is characterized in that the mixed crystal of the active layer is more strongly ordered than that of the two cladding layers. This makes the difference in bandgap between these layers greater than in the known diode. The diode thus has a comparatively high T.sub.o value and accordingly a high maximum operation temperature. The invention also relates to a method of manufacturing such a diode. In this method, a difference in the degree of ordering between the active layer and the cladding layers is achieved through a change in the growing temperature or in the ratio of the quantities of the offered elements during providing of the semiconductor layers. Thus diodes--for example in the InGaP/InAlGaP material system-with the required characteristics are obtained. |
| 公开日期 | 1993-04-20 |
| 申请日期 | 1991-04-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/39626]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | JDS UNIPHASE CORPORATION |
| 推荐引用方式 GB/T 7714 | VALSTER, ADRIAAN,LIEDENBAUM, COEN T. H. F.. Radiation-emitting semiconductor device having emission in the visible range and a high maximum operating temperature. US5204869. 1993-04-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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