Three-mirror active-passive semiconductor laser
文献类型：专利
| 作者 | GARMIRE, ELSA M.; EVANS, GARY A.; NIESEN, JOSEPH W. |
| 发表日期 | 1984-12-11 |
| 专利号 | US4488307 |
| 著作权人 | UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Three-mirror active-passive semiconductor laser |
| 英文摘要 | Disclosed is a GaA1As laser diode wherein an abrupt etch step in the waveguide layer forms a third mirror. The structure is a large optical cavity double heterostructure laser having a relatively long active cavity and a relatively short passive cavity. Output is temperature and current sensitive for single mode operation, widely-spaced dual mode operation, and narrow-band multimode operation. |
| 公开日期 | 1984-12-11 |
| 申请日期 | 1982-06-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/39641]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY |
| 推荐引用方式 GB/T 7714 | GARMIRE, ELSA M.,EVANS, GARY A.,NIESEN, JOSEPH W.. Three-mirror active-passive semiconductor laser. US4488307. 1984-12-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。