Method of manufacturing a surface-emitting type semiconductor laser device
文献类型：专利
| 作者 | IGA, KENICHI; IBARAKI, AKIRA; KAWASHIMA, KENJI; FURUSAWA, KOTARO; ISHIKAWA, TORU |
| 发表日期 | 1993-08-17 |
| 专利号 | US5236864 |
| 著作权人 | RESEARCH DEVELOPMENT CORPORATION OF JAPAN |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of manufacturing a surface-emitting type semiconductor laser device |
| 英文摘要 | A method of manufacturing a surface-emitting-type semiconductor laser device having a buried structure. A GaAlAs film is used as a mask layer in forming a GaAlAs/GaAs system burying part around a GaAlAs/GaAs system buried part. The mask layer can be formed continuously together with an active layer, a cladding layer and the like which constitute the buried part by means of a crystal growing apparatus for forming the buried part. When the system is etched, the GaAlAs film mask prevents the system buried part from becoming undercut so that the mask has better resistance to peeling during subsequent processing. |
| 公开日期 | 1993-08-17 |
| 申请日期 | 1992-05-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/39651]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | RESEARCH DEVELOPMENT CORPORATION OF JAPAN |
| 推荐引用方式 GB/T 7714 | IGA, KENICHI,IBARAKI, AKIRA,KAWASHIMA, KENJI,et al. Method of manufacturing a surface-emitting type semiconductor laser device. US5236864. 1993-08-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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