Visible wavelength, semiconductor optoelectronic device with a high power broad, significantly laterally uniform, diffraction limited output beam
文献类型：专利
| 作者 | GEELS, RANDALL S.; PARKE, ROSS A.; WELCH, DAVID F. |
| 发表日期 | 2001-01-30 |
| 专利号 | US6181721 |
| 著作权人 | JDS UNIPHASE CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Visible wavelength, semiconductor optoelectronic device with a high power broad, significantly laterally uniform, diffraction limited output beam |
| 英文摘要 | A Group III-V semiconductor optoelectronic device provides for visible wavelength light output having a more laterally uniform, high power beam profile, albeit still quasi-Gaussian. A number of factors contribute to the enhanced profile including an improvement in reducing band offset of the Group III-V deposited layers improving carrier density through a decrease in the voltage drop require to generate carrier flow; reduction of contaminants in the growth of Group III-V AlGaInP-containing layers with compositional Al, providing for quality material necessary to achieve operation at the desired visible wavelengths; the formation of an optical resonator cavity that provides, in part, weak waveguiding of the propagating light; and the utilization of a mechanism to provide for beam spreading and filing in a beam diverging gain section prior to actively aggressive gain pumping of the propagating light in the device. |
| 公开日期 | 2001-01-30 |
| 申请日期 | 1996-05-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/39656]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | JDS UNIPHASE CORPORATION |
| 推荐引用方式 GB/T 7714 | GEELS, RANDALL S.,PARKE, ROSS A.,WELCH, DAVID F.. Visible wavelength, semiconductor optoelectronic device with a high power broad, significantly laterally uniform, diffraction limited output beam. US6181721. 2001-01-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。