Verfahren zum selektiven Beschichten lichtemittierender Halbleitereinrichtungen
文献类型：专利
| 作者 | AOYAGI,TOSHITAKA; SHIGIHARA KIMIO |
| 发表日期 | 1993-05-06 |
| 专利号 | DE4025144C2 |
| 著作权人 | MITSUBISHI DENKI K.K. |
| 国家 | 德国 |
| 文献子类 | 授权发明 |
| 其他题名 | Verfahren zum selektiven Beschichten lichtemittierender Halbleitereinrichtungen |
| 英文摘要 | A method of selectively coating one of two spaced apart facets of respective light-emitting regions on the same surface of a semiconductor device formed in a semiconductor wafer includes forming at least one first groove in a wafer and forming at least one second groove in the wafer intersecting the first groove, exposing light-emitting region facets on a side wall surface of the second groove. A stream of an evaporated coating material is directed across an edge, formed by the intersection of a side wall surface of the second groove with the first groove, at an angle relative to the wafer surface so that the edge shadows one of the light-emitting region facets but not the other. After the coating process, the wafer is divided into individual devices that may include adjacent, differently coated light-emitting region facets. The invention avoids a mechanical mask alignment step by employing in the coating process first grooves that are self aligning relative to the light-emitting region facets. |
| 公开日期 | 1993-05-06 |
| 申请日期 | 1990-08-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/39681]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI K.K. |
| 推荐引用方式 GB/T 7714 | AOYAGI,TOSHITAKA,SHIGIHARA KIMIO. Verfahren zum selektiven Beschichten lichtemittierender Halbleitereinrichtungen. DE4025144C2. 1993-05-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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