Semiconductor laser device having an oscillation wavelength in the visible short-wavelength region
文献类型：专利
| 作者 | HAYAKAWA, TOSHIRO; SUYAMA, TAKAHIRO; TAKAHASHI, KOSEI; YAMAMOTO, SABURO |
| 发表日期 | 1988-07-19 |
| 专利号 | US4759024 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device having an oscillation wavelength in the visible short-wavelength region |
| 英文摘要 | A semiconductor laser device comprises a superlatticed layer which is composed of alternate layers consisting of GAP thin layers and AlP thin layers. The superlatticed layer is formed as an active layer on a GaP substrate. The semiconductor laser device also is composed of two superlatticed cladding layers formed on either side of the active layer. The laser device of the present invention has an oscillation wavelength in the visible short-wavelength region. |
| 公开日期 | 1988-07-19 |
| 申请日期 | 1986-04-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/39691]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | HAYAKAWA, TOSHIRO,SUYAMA, TAKAHIRO,TAKAHASHI, KOSEI,et al. Semiconductor laser device having an oscillation wavelength in the visible short-wavelength region. US4759024. 1988-07-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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