Nitride compound semiconductor light emitting element and its manufacturing method
文献类型：专利
| 作者 | FURUKAWA, CHISATO; SUGAWARA, HIDETO; ISHIKAWA, MASAYUKI; SUZUKI, NOBUHIRO |
| 发表日期 | 1999-11-09 |
| 专利号 | US5981977 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Nitride compound semiconductor light emitting element and its manufacturing method |
| 英文摘要 | A nitride compound semiconductor light emitting element comprises a substrate, a nitride compound semiconductor n-type layer, a mask layer having a predetermined opening, a nitride compound semiconductor buffer layer epitaxially grown on said n-type layer exclusively at said opening. The buffer layer has a recess on its top face so that a thickness of said buffer layer is thinner above a central portion of the opening and thicker above edge portions of the opening. A nitride compound semiconductor active layer is selectively formed on the recess of the buffer layer to be thicker at the central portion of the recess and thinner at the edges of the recess. A nitride compound semiconductor burying layer overlays the mask layer and the active layer to cover the active layer. By selectively growing the buffer layer and the active layer in the opening of the mask layer formed on the substrate and by growing additional layers to bury the entire structure and to flatten the surface, a planar-type, stripe-buried structure is realized. The active layer has a distribution of refractive index due to the distribution of thickness resulting from the selective growth and can confine light with high efficiency. Additionally, by using an insulation film, highly efficient confinement of current is realized to provide a light emitting element for a shorter wavelength with a high luminous intensity and a low oscillation threshold value. |
| 公开日期 | 1999-11-09 |
| 申请日期 | 1998-07-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/39695]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA |
| 推荐引用方式 GB/T 7714 | FURUKAWA, CHISATO,SUGAWARA, HIDETO,ISHIKAWA, MASAYUKI,et al. Nitride compound semiconductor light emitting element and its manufacturing method. US5981977. 1999-11-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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