Semiconductor laser of modulation doping quantum well structure with stopper against dopant dispersion and manufacturing method thereof
文献类型：专利
| 作者 | OTSUKA, NOBUYUKI; KITO, MASAHIRO; ISHINO, MASATO; MATSUI, YASUSHI |
| 发表日期 | 1994-06-07 |
| 专利号 | US5319657 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser of modulation doping quantum well structure with stopper against dopant dispersion and manufacturing method thereof |
| 英文摘要 | The semiconductor laser comprises a Sn doped InP substrate 1, n-InGaAsP wave guide layer 2, 5 nm thick InGaAs well layer 3, 3.5 nm thick undoped InGaAsP layer 4, 3 nm thick p-InGaAsP modulation doping layer 5, 3.5 nm thick undoped InGaAsP layer 6, a modulation doping quantum well layer 7 with ten wells, a 90 nm thick p-InGaAsP layer 8, a p-InP clad layer 9 (Zn=7x1017 cm-3), p-n-p current block layer 10, and a mesa-shaped active layer region 1 An Au/sn n-electrode 12 and if Au/Zn p-electrode 13 are formed by vapor deposition to complete the laser structure. |
| 公开日期 | 1994-06-07 |
| 申请日期 | 1992-10-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/39702]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | OTSUKA, NOBUYUKI,KITO, MASAHIRO,ISHINO, MASATO,et al. Semiconductor laser of modulation doping quantum well structure with stopper against dopant dispersion and manufacturing method thereof. US5319657. 1994-06-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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