Laser diode and semiconductor light-emitting device producing visible-wavelength radiation
文献类型：专利
| 作者 | JIKUTANI, NAOTO; TAKAHASHI, TAKASHI; SATO, SHUNICHI |
| 发表日期 | 2003-09-02 |
| 专利号 | US6614821 |
| 著作权人 | SPS-AFOS GROUP LIMITED |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Laser diode and semiconductor light-emitting device producing visible-wavelength radiation |
| 英文摘要 | A laser diode includes a substrate having a lattice constant of GaAs or between GaAs and GaP, a first cladding layer of AlGaInP formed on the substrate, an active layer of GaInAsP formed on the first cladding layer, an etching stopper layer of GaInP formed on the active layer, a pair of current-blocking regions of AlGaInP formed on the etching stopper layer so as to define a strip region therebetween, an optical waveguide layer of AlGaInP formed on the pair of current-blocking regions so as to cover the etching stopper layer in the stripe region, and a second cladding layer of AlGaInP formed on the optical waveguide layer, wherein the current-blocking regions having an Al content substantially identical with an Al content of the second cladding layer. |
| 公开日期 | 2003-09-02 |
| 申请日期 | 2000-08-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/39717]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SPS-AFOS GROUP LIMITED |
| 推荐引用方式 GB/T 7714 | JIKUTANI, NAOTO,TAKAHASHI, TAKASHI,SATO, SHUNICHI. Laser diode and semiconductor light-emitting device producing visible-wavelength radiation. US6614821. 2003-09-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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