Group III nitride semiconductor light emitting device and method of fabricating group III nitride semiconductor light emitting device
文献类型：专利
| 作者 | YONEMURA, TAKUMI; KYONO, TAKASHI; ENYA, YOHEI |
| 发表日期 | 2014-10-28 |
| 专利号 | US8872156 |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Group III nitride semiconductor light emitting device and method of fabricating group III nitride semiconductor light emitting device |
| 英文摘要 | A group III nitride semiconductor light emitting device includes an n-type cladding layer and a p-type cladding layer on a primary surface of a substrate, the c-axes of which tilt relative to the normal axis of the primary surface of the substrate. The p-type cladding layer is doped with a p-type dopant providing an acceptor level, and the p-type cladding layer contains an n-type impurity providing a donor level. An active layer is disposed between the n-type cladding layer and the p-type cladding layer. The concentration of the p-type dopant is greater than that of the n-type impurity. The difference (E(BAND)−E(DAP)) between the energy E(BAND) of a band-edge emission peak value in the photoluminescence spectrum of the p-type cladding layer and the energy E(DAP) of a donor-acceptor pair emission peak value in the photoluminescence spectrum is not more than 0.42 electron volts. |
| 公开日期 | 2014-10-28 |
| 申请日期 | 2012-04-23 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/39745]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 推荐引用方式 GB/T 7714 | YONEMURA, TAKUMI,KYONO, TAKASHI,ENYA, YOHEI. Group III nitride semiconductor light emitting device and method of fabricating group III nitride semiconductor light emitting device. US8872156. 2014-10-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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