Semiconductor devices with improved heat radiation and current concentration
文献类型：专利
| 作者 | ITOH, KUNIO; INOUE, MORIO |
| 发表日期 | 1979-02-20 |
| 专利号 | CA1049127A |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 加拿大 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor devices with improved heat radiation and current concentration |
| 英文摘要 | Abstract of the Disclosure A semiconductor laser is made by sequential liquid- phase epitaxial growth on a semiconductor, e.g., n-type GaAs, substrate, including sequentially forming a first layer, e.g., of n-type CaAlAs; a second layer, e.g., of n-type or p-type GaAs as active region; a third layer, e.g., of p-type GaAlAs; said first to third layers forming a doublehetero-structure; a fourth layer, e.g., of p+-type GaAs; and a fifth layer, e.g., of n-type GaAlAs. The fifth layer is chemically etched to form a groove or narrow window therein so as to expose a portion of the fourth layer at the bottom of the groove, and a metal electrode is provided embedded in said groove. The fifth layer, which is instead of the conventional oxide film, serves as an isolation layer. However, the fifth layer being an epitaxially grown GaAlAs layer, has better thermal conduc- tivity than an oxide film. Therefore, when a suitable heat- sink means or heat-radiation means is provided thereon, a laser of good heat radiation characteristics is obtainable, enabling production of higher power continuous wave laser. The etching for forming the groove is easily effected by chemically etching the desired layer by utilizing the difference in etching speed for different layers of hetero-structure. |
| 公开日期 | 1979-02-20 |
| 申请日期 | 1975-02-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/40101]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | ITOH, KUNIO,INOUE, MORIO. Semiconductor devices with improved heat radiation and current concentration. CA1049127A. 1979-02-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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