Fabricating method of micro lens
文献类型：专利
| 作者 | WAKABAYASHI, SHINICHI; TOUGOU, HITOMARO; TOYODA, YUKIO; OHKI, YOSHIMASA |
| 发表日期 | 1994-05-31 |
| 专利号 | US5316640 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Fabricating method of micro lens |
| 英文摘要 | A testing sample is formed in a three-story structure consisting of a photo-resist 13, a silicon dioxide film 12, and a GaAs substrate 1 The pattern of the photo-resist 13 is transferred onto the silicon dioxide film 12 by effecting the photo-resist 13 as a mask. Thus obtained silicon dioxide film mask 14 and the GaAs substrate 11 are processed in compliance with a reactive ion beam etching method; that is, the silicon dioxide film mask 14 and the GaAs substrate 11 are irradiated by the chlorine ion beam 15. The silicon dioxide film and the GaAs substrate are gradually etched by the irradiation of the chlorine ion beam 15. In this case, the etching is differently developed in two regions. In one region which is not covered by the mask, the etching advances uniformly in a normal direction with respect to the GaAs substrate at a certain etching rate. On the other hand, in the other region which is covered by the mask, the silicon dioxide film is gradually etched first of all, and the tapered portion of the silicon dioxide film is completely etched earlier than other portion of the silicon dioxide film. Then, the GaAs surface is exposed to the chlorine ion beam at the portion the silicon dioxide film is removed and, in turn, the GaAs substrate is gradually etched by being directly irradiated by the chlorine beam. And, when the silicon dioxide film mask is completely removed, the micro lens is finally formed on the GaAs substrate. |
| 公开日期 | 1994-05-31 |
| 申请日期 | 1992-06-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/40108]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | WAKABAYASHI, SHINICHI,TOUGOU, HITOMARO,TOYODA, YUKIO,et al. Fabricating method of micro lens. US5316640. 1994-05-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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