Method for fabricating a semiconductor device by selectively controlling growth of an epitaxial layer without a mask
文献类型：专利
| 作者 | NAKATSU, HIROSHI |
| 发表日期 | 1998-12-29 |
| 专利号 | US5854089 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for fabricating a semiconductor device by selectively controlling growth of an epitaxial layer without a mask |
| 英文摘要 | A semiconductor structure including: a substrate having a step portion; a first semiconductor layer formed on a region of the substrate which is selectively irradiated by light at an angle with respect to the projecting portion by using the step portion as a mask; and a second semiconductor layer formed on a region of the substrate shaded by the step portion. |
| 公开日期 | 1998-12-29 |
| 申请日期 | 1996-06-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/40113]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | NAKATSU, HIROSHI. Method for fabricating a semiconductor device by selectively controlling growth of an epitaxial layer without a mask. US5854089. 1998-12-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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