Method of measuring doping characteristic of compound semiconductor in real time
文献类型：专利
| 作者 | BAEK, JONG-HYEOB; LEE, BUN; LEE, JIN-HONG; CHOI, SUNG-WOO |
| 发表日期 | 1998-01-06 |
| 专利号 | US5705403 |
| 著作权人 | INTELLECTUAL DISCOVERY CO. LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of measuring doping characteristic of compound semiconductor in real time |
| 英文摘要 | A method of sensing the concentration of a doped impurity on a semiconductor in real time and a method of sensing the change of its growth rate dependent on time among the changes of the growing conditions due to doping by using a real time analysis apparatus in growing a heterostructured semiconductor by a MOCVD method. A reflecting signal during the growth by means of a real time analysis apparatus has a periodic property, an amplitude change of a reflecting signal is dependent on an absorption coefficient when an absorption exists on an epitaxial layer, an impurity concentration can be obtained by using the relation of an absorption coefficient and an impurity concentration. In addition, if each peak is independently analyzed, the respective growth rate dependent on time are measured individually, so that the reduced growth rate dependent on time of the growth rate is sensed in a carbon doped AlAs layer. |
| 公开日期 | 1998-01-06 |
| 申请日期 | 1996-08-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/40115]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | INTELLECTUAL DISCOVERY CO. LTD. |
| 推荐引用方式 GB/T 7714 | BAEK, JONG-HYEOB,LEE, BUN,LEE, JIN-HONG,et al. Method of measuring doping characteristic of compound semiconductor in real time. US5705403. 1998-01-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。