Method of fabricating a compound semiconductor device
文献类型：专利
| 作者 | YOON, HYUNG-SUP; LEE, JIN-HEE; PARK, BYUNG-SUN; PARK, CHUL-SUN; PYUN, KWANG-EUI |
| 发表日期 | 1999-03-23 |
| 专利号 | US5885847 |
| 著作权人 | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of fabricating a compound semiconductor device |
| 英文摘要 | The invention relates to a method of fabricating a compound semiconductor device by forming a first and a second compound semiconductor devices having a plurality of different epitaxial layers on a common semiconductor substrate. The method comprises the steps of sequentially forming a plurality of first epitaxial layers for manufacturing the first compound semiconductor device on the semiconductor substrate; forming a first insulating film pattern for defining an active region of the first compound semiconductor device; etching the plurality of first epitaxial layers using the first insulating film pattern as a mask; forming a second insulating film on the resultant structure; forming a sidewall insulating spacer on the sidewall of the active region of the first compound semiconductor device by dry etching the second insulating film; sequentially forming a plurality of second epitaxial layers for manufacturing the second compound semiconductor device on the portion from which the plurality of first epitaxial layers is etched back; forming each electrode of the first and second compound semiconductor devices; and forming an interconnection electrode interconnecting each electrode of the first and second compound semiconductor devices. |
| 公开日期 | 1999-03-23 |
| 申请日期 | 1997-04-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/40118]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
| 推荐引用方式 GB/T 7714 | YOON, HYUNG-SUP,LEE, JIN-HEE,PARK, BYUNG-SUN,et al. Method of fabricating a compound semiconductor device. US5885847. 1999-03-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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