Compound semiconductor light emitting device and method of preparing the same
文献类型：专利
| 作者 | MIURA, YOSHIKI; MATSUBARA, HIDEKI; MATSUSHIMA, MASATO; SEKI, HISASHI; KOUKITU, AKINORI |
| 发表日期 | 1998-05-26 |
| 专利号 | US5756374 |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Compound semiconductor light emitting device and method of preparing the same |
| 英文摘要 | A compound semiconductor light emitting device of high performance and a method which can industrially prepare the same are provided. The compound semiconductor light emitting device includes a GaAs substrate, a buffer layer consisting of GaN, having a thickness of 10 nm to 80 nm, which is formed on the substrate, an epitaxial layer consisting of AlxGa1-xN(0 |
| 公开日期 | 1998-05-26 |
| 申请日期 | 1997-05-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/40120]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 推荐引用方式 GB/T 7714 | MIURA, YOSHIKI,MATSUBARA, HIDEKI,MATSUSHIMA, MASATO,et al. Compound semiconductor light emitting device and method of preparing the same. US5756374. 1998-05-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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